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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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TMOS E-FET.TM Power Field Effect Transistor
N-Channel Enhancement-Mode Silicon Gate
This advanced TMOS E-FET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offers a drain-to-source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients. * Avalanche Energy Specified * Source-to-Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode * Diode is Characterized for Use in Bridge Circuits * IDSS and VDS(on) Specified at Elevated Temperature
G S
MTB29N15E
TMOS POWER FET 29 AMPERES 150 VOLTS RDS(on) = 0.07 OHM
(R)
N-Channel D
CASE 418B-03, Style 2 D2PAK
MAXIMUM RATINGS (TC = 25C unless otherwise noted)
Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate-to-Source Voltage -- Continuous Gate-to-Source Voltage -- Non-Repetitive (tp 10 ms) Drain Current -- Continuous Drain Current -- Continuous @ 100C Drain Current -- Single Pulse (tp 10 s) Total Power Dissipation Derate above 25C Total Power Dissipation @ TA = 25C (1) Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy -- STARTING TJ = 25C (VDD = 25 Vdc, VGS = 10 Vdc, PEAK IL = 29 Apk, L = 1.0 mH, RG = 25 ) Thermal Resistance -- Junction to Case Thermal Resistance -- Junction to Ambient Thermal Resistance -- Junction to Ambient (1) Maximum Lead Temperature for Soldering Purposes, 1/8 from case for 10 seconds (1) When surface mounted to an FR4 board using the minimum recommended pad size.
This document contains information on a product under development. Motorola reserves the right to change or discontinue this product without notice.
Symbol VDSS VDGR VGS VGSM ID ID IDM PD
Value 150 150 20 40 29 19 102 125 1.0 2.5 - 55 to 150 421
Unit Vdc Vdc Vdc Vpk Adc Apk Watts W/C Watts C mJ
TJ, Tstg EAS RJC RJA RJA TL
1.0 62.5 50 260
C/W
C
E-FET is a trademark of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
(c) Motorola TMOS Motorola, Inc. 1997
Power MOSFET Transistor Device Data
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MTB29N15E
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) Temperature Coefficient (Positive) Zero Gate Voltage Drain Current (VDS = 150 Vdc, VGS = 0 Vdc) (VDS = 150 Vdc, VGS = 0 Vdc, TJ = 125C) Gate-Body Leakage Current (VGS = 20 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS (1) Gate Threshold Voltage (VDS = VGS, ID = 250 Adc) Threshold Temperature Coefficient (Negative) Static Drain-to-Source On-Resistance (VGS = 10 Vdc, ID = 14.5 Adc) Drain-to-Source On-Voltage (VGS = 10 Vdc) (ID = 29 Adc) (ID = 14.5 Adc, TJ = 125C) Forward Transconductance (VDS = 8.6 Vdc, ID = 14.5 Adc) DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Transfer Capacitance SWITCHING CHARACTERISTICS (2) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge ( (VDS = 120 Vdc, ID = 29 Adc, Vd , Ad , VGS = 10 Vdc) Vdc, (VDD = 75 Vd ID = 29 Adc, Ad VGS = 10 Vdc Vdc, RG = 9.1 ) ) td(on) tr td(off) tf QT Q1 Q2 Q3 SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage (IS = 29 Adc, VGS = 0 Vdc) (IS = 29 Adc, VGS = 0 Vdc, TJ = 125C) Reverse Recovery Time ( (IS = 29 Adc, VGS = 0 Vdc, Ad , Vd , dIS/dt = 100 A/s) Reverse Recovery Stored Charge INTERNAL PACKAGE INDUCTANCE Internal Drain Inductance (Measured from the contact screw on tab to center of die) (Measured from the drain lead 0.25 from package to center of die) Internal Source Inductance (Measured from the source lead 0.25 from package to source bond pad) (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2%. (2) Switching characteristics are independent of operating junction temperature. LD -- -- LS -- 7.5 -- 3.5 4.5 -- -- nH trr ta tb QRR VSD -- -- -- -- -- -- 0.92 TBD 174 140 34 1.4 1.3 -- -- -- -- -- C ns Vdc -- -- -- -- -- -- -- -- 17.5 108 90 85 78 12 37 23 40 220 180 170 110 -- -- -- nC ns (VDS = 25 Vdc, VGS = 0 Vdc, Vdc Vdc f = 1.0 MHz) Ciss Coss Crss -- -- -- 2250 455 133 3150 910 190 pF VGS(th) 2.0 -- RDS(on) -- VDS(on) -- -- gFS 10 -- -- 18 2.4 2.1 -- mhos 0.055 0.07 Vdc 2.7 TBD 4.0 -- Vdc mV/C Ohms V(BR)DSS 150 -- IDSS -- -- IGSS -- -- -- -- 10 100 100 nAdc -- TBD -- -- Vdc mV/C Adc Symbol Min Typ Max Unit
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Motorola TMOS Power MOSFET Transistor Device Data
MTB29N15E
PACKAGE DIMENSIONS
C E -B-
4
V
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. INCHES MIN MAX 0.340 0.380 0.380 0.405 0.160 0.190 0.020 0.035 0.045 0.055 0.100 BSC 0.080 0.110 0.018 0.025 0.090 0.110 0.575 0.625 0.045 0.055 MILLIMETERS MIN MAX 8.64 9.65 9.65 10.29 4.06 4.83 0.51 0.89 1.14 1.40 2.54 BSC 2.03 2.79 0.46 0.64 2.29 2.79 14.60 15.88 1.14 1.40
A
1 2 3
S
STYLE 2: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN
-T-
SEATING PLANE
K G D 3 PL 0.13 (0.005) H
M
J
DIM A B C D E G H J K S V
TB
M
CASE 418B-03 ISSUE C
Motorola TMOS Power MOSFET Transistor Device Data
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MTB29N15E
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 1-303-675-2140 or 1-800-441-2447 Customer Focus Center: 1-800-521-6274 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 1-602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, Motorola Fax Back System - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 - http://sps.motorola.com/mfax/ HOME PAGE: http://motorola.com/sps/ JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488
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Motorola TMOS Power MOSFET Transistor MTB29N15E/D Device Data

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